N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK Vishay SIHB11N80AE-GE3
- RS Stock No.:
- 210-4966
- Mfr. Part No.:
- SIHB11N80AE-GE3
- Brand:
- Vishay
2000 In stock - FREE next working day delivery available
Price Each (In a Tube of 50)
£1.38
(exc. VAT)
£1.66
(inc. VAT)
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.38 | £69.00 |
| 100 - 200 | £1.311 | £65.55 |
| 250 + | £1.242 | £62.10 |
*price indicative
- RS Stock No.:
- 210-4966
- Mfr. Part No.:
- SIHB11N80AE-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 8 A |
| Maximum Drain Source Voltage | 800 V |
| Series | E |
| Package Type | D2PAK (TO-263) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 0.391 Ω |
| Maximum Gate Threshold Voltage | 2 → 4V |
| Number of Elements per Chip | 1 |
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