Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3
- RS Stock No.:
- 210-4966
- Mfr. Part No.:
- SIHB11N80AE-GE3
- Brand:
- Vishay
Subtotal (1 tube of 50 units)*
£30.15
(exc. VAT)
£36.20
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 1,950 unit(s), ready to ship
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | £0.603 | £30.15 |
*price indicative
- RS Stock No.:
- 210-4966
- Mfr. Part No.:
- SIHB11N80AE-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 8 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | D2PAK (TO-263) | |
| Series | E | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 0.391 Ω | |
| Maximum Gate Threshold Voltage | 2 → 4V | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 8 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Series E | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.391 Ω | ||
Maximum Gate Threshold Voltage 2 → 4V | ||
Number of Elements per Chip 1 | ||
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