Vishay E N-Channel MOSFET, 8 A, 800 V, 3-Pin D2PAK SIHB11N80AE-GE3

Subtotal (1 tube of 50 units)*

£30.15

(exc. VAT)

£36.20

(inc. VAT)

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50 +£0.603£30.15

*price indicative

RS Stock No.:
210-4966
Mfr. Part No.:
SIHB11N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

800 V

Package Type

D2PAK (TO-263)

Series

E

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.391 Ω

Maximum Gate Threshold Voltage

2 → 4V

Number of Elements per Chip

1

The Vishay E Series Power MOSFET has D2PAK (TO-263) package type with single configuration.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Ciss)
Reduced switching and conduction losses
Ultra low gate charge (Qg)
Avalanche energy rated (UIS)
Integrated Zener diode ESD protection

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