Vishay SIHB21N80AE N channel-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-263 SIHB21N80AE-T1-GE3

Bulk discount available

Subtotal (1 tape of 1 unit)*

£3.20

(exc. VAT)

£3.84

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s)
Per Tape
1 - 9£3.20
10 - 49£1.98
50 - 99£1.54
100 +£1.04

*price indicative

RS Stock No.:
735-128
Mfr. Part No.:
SIHB21N80AE-T1-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N channel

Product Type

MOSFET

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Series

SIHB21N80AE

Package Type

TO-263

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

0.205Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

179W

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30V

Typical Gate Charge Qg @ Vgs

48nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Width

0.355mm

Length

0.42mm

Automotive Standard

No

COO (Country of Origin):
IL
The Vishay Power MOSFET designed for efficient operation in power supplies and other applications, aimed at reducing energy losses and enhancing reliability.

Compact D2PAK package for space-saving designs

Reduced switching and conduction losses for improved performance

Related links