Vishay SiHW21N80AE Type N-Channel MOSFET, 17.4 A, 800 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

£85.17

(exc. VAT)

£102.21

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 30£2.839£85.17
60 - 120£2.782£83.46
150 +£2.64£79.20

*price indicative

RS Stock No.:
188-4880
Mfr. Part No.:
SIHW21N80AE-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17.4A

Maximum Drain Source Voltage Vds

800V

Series

SiHW21N80AE

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

235mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

48nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

32W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Height

21.46mm

Width

5.31 mm

Length

16.26mm

Standards/Approvals

No

Automotive Standard

No

E Series Power MOSFET.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

Reduced switching and conduction losses

APPLICATIONS

Server and telecom power supplies

Switch mode power supplies (SMPS)

Power factor correction power supplies (PFC)

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