Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD SIHW21N80AE-GE3
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Save 7% when you buy 150 units
Subtotal (1 tube of 30 units)*
£85.17
(exc. VAT)
£102.21
(inc. VAT)
FREE delivery for orders over £50.00
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- Shipping from 26 March 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.839 | £85.17 |
| 60 - 120 | £2.782 | £83.46 |
| 150 + | £2.64 | £79.20 |
*price indicative
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 235 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Length | 16.26mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 235 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Length 16.26mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.2V | ||
Height 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
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