Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD SIHW21N80AE-GE3
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 30 units)*
£83.73
(exc. VAT)
£100.47
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,990 unit(s) shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.791 | £83.73 |
| 60 - 120 | £2.735 | £82.05 |
| 150 + | £2.596 | £77.88 |
*price indicative
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 235 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.26mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 21.46mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 235 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Length 16.26mm | ||
Number of Elements per Chip 1 | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 21.46mm | ||
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