Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD SIHW21N80AE-GE3
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 30 units)*
£85.17
(exc. VAT)
£102.21
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 13 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | £2.839 | £85.17 |
| 60 - 120 | £2.782 | £83.46 |
| 150 + | £2.64 | £79.20 |
*price indicative
- RS Stock No.:
- 188-4880
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 235 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Length | 16.26mm | |
| Width | 5.31mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 21.46mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 235 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Length 16.26mm | ||
Width 5.31mm | ||
Forward Diode Voltage 1.2V | ||
Height 21.46mm | ||
Minimum Operating Temperature -55 °C | ||
E Series Power MOSFET.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low effective capacitance (Co(er))
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Related links
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-247AD SIHW21N80AE-GE3
- Vishay N-Channel MOSFET 800 V, 3-Pin TO-247AC SIHG21N80AE-GE3
- Vishay E N-Channel MOSFET 800 V, 3-Pin D2PAK SIHB21N80AE-GE3
- Vishay E Series N-Channel MOSFET 700 V, 3-Pin TO-247AD SQW61N65EF-GE3
- Vishay E Series Dual N-Channel MOSFET 700 V, 3-Pin TO-247AD SQW33N65EF-GE3
- Vishay E Series Dual N-Channel MOSFET 700 V, 3-Pin TO-247AD SQW44N65EF-GE3
- Vishay MXP120A SiC N-Channel MOSFET 1200 V, 3-Pin TO-247AD 3L MXP120A080FW-GE3
- IXYS HiperFET 24 A 3-Pin TO-247AD IXFH24N80P