Vishay N-Channel MOSFET, 17.4 A, 800 V, 3-Pin TO-247AD SIHW21N80AE-GE3
- RS Stock No.:
- 188-5016
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 2 units)*
£7.97
(exc. VAT)
£9.564
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 26 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £3.985 | £7.97 |
| 20 - 48 | £3.585 | £7.17 |
| 50 - 98 | £3.395 | £6.79 |
| 100 - 198 | £3.195 | £6.39 |
| 200 + | £2.995 | £5.99 |
*price indicative
- RS Stock No.:
- 188-5016
- Mfr. Part No.:
- SIHW21N80AE-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.4 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-247AD | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 235 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 32 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 5.31mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 16.26mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Height | 21.46mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.4 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-247AD | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 235 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 32 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 5.31mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 16.26mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
Height 21.46mm | ||
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