N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

RS Stock No.:: 124-2251
Mfr. Part No.:: SIHH26N60E-T1-GE3
Brand:: Vishay

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

Available to back order for despatch 09/01/2025

Price Each

£4.32

(exc. VAT)

£5.18

(inc. VAT)

Units	Per unit
1 - 9	£4.32
10 - 49	£3.20
50 - 99	£2.68
100 - 249	£2.37
250 +	£2.25

RS Stock No.:: 124-2251
Mfr. Part No.:: SIHH26N60E-T1-GE3
Brand:: Vishay

SiHH26N60E, E Series Power MOSFET 650V
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	25 A
Maximum Drain Source Voltage	600 V
Package Type	PowerPAK 8 x 8
Series	E Series
Mounting Type	Surface Mount
Pin Count	4
Maximum Drain Source Resistance	135 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	202 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+150 °C
Typical Gate Charge @ Vgs	77 nC @ 10 V
Length	8.1mm
Width	8.1mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	1mm
Forward Diode Voltage	1.2V

N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 Vishay SIHH26N60E-T1-GE3

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor

Features

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