Vishay E Series N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 SIHH26N60E-T1-GE3

Save 47% when you buy 250 units

Subtotal (1 unit)*

£4.54

(exc. VAT)

£5.45

(inc. VAT)

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1 - 9£4.54
10 - 49£3.37
50 - 99£2.82
100 - 249£2.49
250 +£2.37

*price indicative

Packaging Options:
RS Stock No.:
124-2251
Mfr. Part No.:
SIHH26N60E-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

600 V

Package Type

PowerPAK 8 x 8

Series

E Series

Mounting Type

Surface Mount

Pin Count

4

Maximum Drain Source Resistance

135 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

202 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

8.1mm

Typical Gate Charge @ Vgs

77 nC @ 10 V

Width

8.1mm

Transistor Material

Si

Height

1mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

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