Vishay E Type N-Channel MOSFET, 25 A, 600 V Enhancement, 4-Pin PowerPAK SIHH26N60E-T1-GE3

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£4.57

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£5.48

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1 - 9£4.57
10 - 49£3.39
50 - 99£2.84
100 - 249£2.51
250 +£2.39

*price indicative

Packaging Options:
RS Stock No.:
124-2251
Mfr. Part No.:
SIHH26N60E-T1-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

600V

Package Type

PowerPAK

Series

E

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

135mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

77nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

202W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

8.1 mm

Height

1mm

Length

8.1mm

Automotive Standard

No

COO (Country of Origin):
TW

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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