Vishay E Series N-Channel MOSFET, 25 A, 600 V, 4-Pin PowerPAK 8 x 8 SIHH26N60E-T1-GE3
- RS Stock No.:
- 124-2251
- Mfr. Part No.:
- SIHH26N60E-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£4.54
(exc. VAT)
£5.45
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 25 February 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £4.54 |
| 10 - 49 | £3.37 |
| 50 - 99 | £2.82 |
| 100 - 249 | £2.49 |
| 250 + | £2.37 |
*price indicative
- RS Stock No.:
- 124-2251
- Mfr. Part No.:
- SIHH26N60E-T1-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | E Series | |
| Package Type | PowerPAK 8 x 8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 135 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 202 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 8.1mm | |
| Transistor Material | Si | |
| Width | 8.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 77 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 600 V | ||
Series E Series | ||
Package Type PowerPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 135 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 202 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 8.1mm | ||
Transistor Material Si | ||
Width 8.1mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 77 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Forward Diode Voltage 1.2V | ||
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