Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB30N60E-GE3
- RS Stock No.:
- 145-1820
- Mfr. Part No.:
- SIHB30N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
£185.40
(exc. VAT)
£222.50
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 650 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £3.708 | £185.40 |
| 100 - 200 | £3.485 | £174.25 |
| 250 + | £3.152 | £157.60 |
*price indicative
- RS Stock No.:
- 145-1820
- Mfr. Part No.:
- SIHB30N60E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | D2PAK (TO-263) | |
| Series | E Series | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.67mm | |
| Width | 9.65mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.83mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type D2PAK (TO-263) | ||
Series E Series | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.67mm | ||
Width 9.65mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 4.83mm | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
MOSFET Transistors, Vishay Semiconductor
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