Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB30N60E-GE3

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Packaging Options:
RS Stock No.:
768-9310
Mfr. Part No.:
SIHB30N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Series

E Series

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

250 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

85 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Length

10.67mm

Width

9.65mm

Height

4.83mm

Minimum Operating Temperature

-55 °C

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses


MOSFET Transistors, Vishay Semiconductor

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