Vishay E Type N-Channel MOSFET, 29 A, 600 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

£99.325

(exc. VAT)

£119.20

(inc. VAT)

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  • 475 unit(s) ready to ship
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Units
Per unit
Per Tube*
25 - 25£3.973£99.33
50 - 100£3.894£97.35
125 +£3.695£92.38

*price indicative

RS Stock No.:
145-2157
Mfr. Part No.:
SIHG30N60E-GE3
Brand:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

29A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-247

Series

E

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

125mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

85nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

250W

Maximum Operating Temperature

150°C

Length

15.87mm

Standards/Approvals

No

Height

20.82mm

Width

5.31 mm

Automotive Standard

No

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg

Low input capacitance (Ciss)

Low on-resistance (RDS(on))

Ultra-low gate charge (Qg)

Fast switching

Reduced switching and conduction losses

MOSFET Transistors, Vishay Semiconductor


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