Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247AC SiHG30N60E-GE3
- RS Stock No.:
- 787-9421
- Mfr. Part No.:
- SiHG30N60E-GE3
- Brand:
- Vishay
Subtotal (1 unit)*
£5.84
(exc. VAT)
£7.01
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 494 unit(s) shipping from 09 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £5.84 |
*price indicative
- RS Stock No.:
- 787-9421
- Mfr. Part No.:
- SiHG30N60E-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247AC | |
| Series | E Series | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 5.31mm | |
| Maximum Operating Temperature | +150 °C | |
| Length | 15.87mm | |
| Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 20.82mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247AC | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 5.31mm | ||
Maximum Operating Temperature +150 °C | ||
Length 15.87mm | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 20.82mm | ||
Minimum Operating Temperature -55 °C | ||
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