Vishay E Type N-Channel MOSFET, 35 A, 650 V Enhancement, 3-Pin TO-247 SiHG080N60E-GE3

Bulk discount available

Subtotal (1 pack of 2 units)*

£8.62

(exc. VAT)

£10.34

(inc. VAT)

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Last RS stock
  • Final 438 unit(s), ready to ship
Units
Per unit
Per Pack*
2 - 18£4.31£8.62
20 - 48£3.88£7.76
50 - 98£3.445£6.89
100 - 198£3.145£6.29
200 +£2.715£5.43

*price indicative

Packaging Options:
RS Stock No.:
228-2864
Mfr. Part No.:
SiHG080N60E-GE3
Brand:
Vishay
Find similar products by selecting one or more attributes.
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

35A

Maximum Drain Source Voltage Vds

650V

Series

E

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

227W

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Automotive Standard

No

The Vishay E Series Power MOSFET reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg

Low effective capacitance (Co(er))

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