Vishay E Series Dual N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247AC SiHG080N60E-GE3
- RS Stock No.:
- 228-2863
- Mfr. Part No.:
- SiHG080N60E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tube of 25 units)*
£63.85
(exc. VAT)
£76.625
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 425 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
25 - 25 | £2.554 | £63.85 |
50 - 100 | £2.503 | £62.575 |
125 + | £2.376 | £59.40 |
*price indicative
- RS Stock No.:
- 228-2863
- Mfr. Part No.:
- SiHG080N60E-GE3
- Brand:
- Vishay
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 35 A | |
Maximum Drain Source Voltage | 650 V | |
Series | E Series | |
Package Type | TO-247AC | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 0.08 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5V | |
Transistor Material | Si | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 650 V | ||
Series E Series | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 0.08 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
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