Vishay E Type N, Type N-Channel MOSFET, 85 A, 700 V Enhancement, 3-Pin Super-247 SiHS90N65E-GE3
- RS Stock No.:
- 228-2884
- Mfr. Part No.:
- SiHS90N65E-GE3
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 25 units)*
£303.20
(exc. VAT)
£363.85
(inc. VAT)
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Units | Per unit | Per Tube* |
|---|---|---|
| 25 - 25 | £12.128 | £303.20 |
| 50 + | £11.522 | £288.05 |
*price indicative
- RS Stock No.:
- 228-2884
- Mfr. Part No.:
- SiHS90N65E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 85A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | Super-247 | |
| Series | E | |
| Mount Type | Through Hole, Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 29mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 625W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 394nC | |
| Forward Voltage Vf | 0.9V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 85A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type Super-247 | ||
Series E | ||
Mount Type Through Hole, Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 29mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 625W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 394nC | ||
Forward Voltage Vf 0.9V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Vishay E Series Power MOSFET reduced switching and conduction losses.
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
Related links
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