Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP SIHF30N60E-GE3
- RS Stock No.:
- 145-1911
- Mfr. Part No.:
- SIHF30N60E-GE3
- Brand:
- Vishay
Subtotal (1 tube of 50 units)*
£104.05
(exc. VAT)
£124.85
(inc. VAT)
FREE delivery for orders over £50.00
- Final 850 unit(s), ready to ship
Units | Per unit | Per Tube* |
---|---|---|
50 + | £2.081 | £104.05 |
*price indicative
- RS Stock No.:
- 145-1911
- Mfr. Part No.:
- SIHF30N60E-GE3
- Brand:
- Vishay
Select all | Attribute | Value |
---|---|---|
Brand | Vishay | |
Channel Type | N | |
Maximum Continuous Drain Current | 29 A | |
Maximum Drain Source Voltage | 600 V | |
Package Type | TO-220FP | |
Series | E Series | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 125 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 2V | |
Maximum Power Dissipation | 37 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Width | 4.83mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 85 nC @ 10 V | |
Transistor Material | Si | |
Length | 10.63mm | |
Height | 16.12mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220FP | ||
Series E Series | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 37 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.83mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 85 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.63mm | ||
Height 16.12mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
Features
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
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