Vishay E Series N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP SIHF30N60E-GE3

Subtotal (1 tube of 50 units)*

£104.05

(exc. VAT)

£124.85

(inc. VAT)

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50 +£2.081£104.05

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RS Stock No.:
145-1911
Mfr. Part No.:
SIHF30N60E-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FP

Series

E Series

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

125 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Width

4.83mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

85 nC @ 10 V

Transistor Material

Si

Length

10.63mm

Height

16.12mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor


The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).

Features


Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses


MOSFET Transistors, Vishay Semiconductor

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