Vishay SiHB105N60EF N-Channel MOSFET, 29 A, 600 V, 3-Pin D2PAK SIHB105N60EF-GE3

Subtotal (1 reel of 3000 units)*

£4,758.00

(exc. VAT)

£5,709.00

(inc. VAT)

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Units
Per unit
Per Reel*
3000 +£1.586£4,758.00

*price indicative

RS Stock No.:
204-7204
Mfr. Part No.:
SIHB105N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

29 A

Maximum Drain Source Voltage

600 V

Package Type

D2PAK (TO-263)

Series

SiHB105N60EF

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.102 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

The Vishay EF Series Power MOSFET With Fast Body Diode has a 4th generation E series technology. It has reduced switching and conduction losses.

Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er)

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