Infineon CoolMOS™ C3 N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1
- RS Stock No.:
- 462-3455
- Distrelec Article No.:
- 302-84-157
- Mfr. Part No.:
- SPW47N60C3FKSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£12.04
(exc. VAT)
£14.45
(inc. VAT)
FREE delivery for orders over £50.00
- 143 unit(s) ready to ship
- Plus 21 unit(s) ready to ship from another location
- Plus 60 unit(s) shipping from 08 October 2025
Units | Per unit |
---|---|
1 - 4 | £12.04 |
5 - 9 | £11.44 |
10 - 24 | £10.96 |
25 - 49 | £10.47 |
50 + | £9.75 |
*price indicative
- RS Stock No.:
- 462-3455
- Distrelec Article No.:
- 302-84-157
- Mfr. Part No.:
- SPW47N60C3FKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 47 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247 | |
Series | CoolMOS™ C3 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 70 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 3.9V | |
Minimum Gate Threshold Voltage | 2.1V | |
Maximum Power Dissipation | 415 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Number of Elements per Chip | 1 | |
Length | 15.9mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 252 nC @ 10 V | |
Width | 5.3mm | |
Transistor Material | Si | |
Height | 20.95mm | |
Minimum Operating Temperature | -55 °C | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 47 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 70 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 415 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 15.9mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 252 nC @ 10 V | ||
Width 5.3mm | ||
Transistor Material Si | ||
Height 20.95mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
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