Infineon CoolMOS™ C3 N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

RS Stock No.:: 462-3455
Distrelec Article No.:: 302-84-157
Mfr. Part No.:: SPW47N60C3FKSA1
Brand:: Infineon

Infineon CoolMOS™ C3 N-Channel MOSFET, 47 A, 650 V, 3-Pin TO-247 SPW47N60C3FKSA1

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£14.45

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Units	Per unit
1 - 4	£12.04
5 - 9	£11.44
10 - 24	£10.96
25 - 49	£10.47
50 +	£9.75

*price indicative

RS Stock No.:: 462-3455
Distrelec Article No.:: 302-84-157
Mfr. Part No.:: SPW47N60C3FKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	47 A
	Maximum Drain Source Voltage	650 V
	Package Type	TO-247
	Series	CoolMOS™ C3
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	70 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	415 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Width	5.3mm
	Length	15.9mm
	Number of Elements per Chip	1
	Typical Gate Charge @ Vgs	252 nC @ 10 V
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V
	Height	20.95mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 47 A
	Maximum Drain Source Voltage 650 V
	Package Type TO-247
	Series CoolMOS™ C3
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 70 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 415 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Width 5.3mm
	Length 15.9mm
	Number of Elements per Chip 1
	Typical Gate Charge @ Vgs 252 nC @ 10 V
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V
	Height 20.95mm

Infineon CoolMOS™C3 Power MOSFET

Infineon CoolMOS™ C3 Series MOSFET, 47A Maximum Continuous Drain Current, 415W Maximum Power Dissipation - SPW47N60C3FKSA1

This high-voltage MOSFET is designed for power electronics applications. With its N-channel configuration, it offers consistent performance in various settings. Capable of handling a continuous drain current of 47A, it serves multiple industrial and automation purposes, ensuring reliability and effectiveness in switching tasks.

Features & Benefits

• High performance with a maximum voltage rating of 650V
• Low maximum drain-source resistance of 70mΩ enhances energy efficiency
• Robust power dissipation capability of 415W supports intensive applications
• Channels configured for enhancement mode allow for improved control
• Designed for through-hole mounting for straightforward integration

Applications

• Suitable for energy conversion in renewable energy
• Employed in motor drive circuits for enhanced efficiency
• Used in power management systems for increased stability

What is the optimal temperature range for operating this device?

The device operates efficiently between -55°C and +150°C, enhancing its reliability across varied environments.

How can it integrate into existing electrical systems?

This MOSFET is designed for through-hole mounting, making it compatible with standard PCB layouts for easy integration.

What are the safety considerations when using this component?

It is crucial to ensure the gate-source voltage remains within -20V to +20V to prevent damage during operation and maintain system stability.

What kind of applications require such high power capabilities?

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.