Infineon CoolMOS™ C3 N-Channel MOSFET, 34 A, 650 V, 3-Pin TO-247 SPW35N60C3FKSA1
- RS Stock No.:
- 752-8502
- Mfr. Part No.:
- SPW35N60C3FKSA1
- Brand:
- Infineon
Save 18% when you buy 50 units
Subtotal (1 unit)*
£8.86
(exc. VAT)
£10.63
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1 unit(s) ready to ship
- Plus 3 unit(s) ready to ship from another location
- Plus 105 unit(s) shipping from 09 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £8.86 |
| 5 - 9 | £8.42 |
| 10 - 24 | £8.06 |
| 25 - 49 | £7.71 |
| 50 + | £7.18 |
*price indicative
- RS Stock No.:
- 752-8502
- Mfr. Part No.:
- SPW35N60C3FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 34 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Series | CoolMOS™ C3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 313 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Width | 5.21mm | |
| Length | 16.13mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 34 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 313 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Width 5.21mm | ||
Length 16.13mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
Infineon CoolMOS™C3 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon CoolMOS™ C3 N-Channel MOSFET 650 V, 3-Pin TO-247 SPW35N60C3FKSA1
- IXYS X2-Class N-Channel MOSFET 650 V, 3-Pin TO-247 IXTH34N65X2
- IXYS HiperFET 34 A 3-Pin TO-247 IXFH34N65X2
- STMicroelectronics MDmesh DM2 N-Channel MOSFET 650 V, 3-Pin TO-220 STP43N60DM2
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-220AB SIHP085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin TO-247AC SIHG085N60EF-GE3
- Vishay Dual Silicon N-Channel MOSFET 650 V, 3-Pin D2PAK SIHB085N60EF-GE3
- Vishay N-Channel MOSFET 650 V, 8-Pin PowerPAK 10 x 12 SIHK065N60E-T1-GE3