Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1
- RS Stock No.:
- 462-3449
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Brand:
- Infineon
Subtotal (1 unit)*
£4.89
(exc. VAT)
£5.87
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 21 unit(s) shipping from 17 November 2025
- Plus 28 unit(s) shipping from 17 November 2025
- Plus 290 unit(s) shipping from 24 November 2025
Units | Per unit |
|---|---|
| 1 - 9 | £4.89 |
| 10 - 24 | £4.64 |
| 25 - 49 | £4.45 |
| 50 - 99 | £4.25 |
| 100 + | £3.96 |
*price indicative
- RS Stock No.:
- 462-3449
- Mfr. Part No.:
- SPW20N60C3FKSA1
- Brand:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Series | CoolMOS™ C3 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 87 nC @ 10 V | |
| Width | 5.3mm | |
| Length | 15.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.95mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 87 nC @ 10 V | ||
Width 5.3mm | ||
Length 15.9mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Height 20.95mm | ||
Infineon CoolMOS™C3 Power MOSFET
Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1
Features & Benefits
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures
Applications
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance
What is the maximum operating temperature for this component?
How does the low gate charge benefit device operation?
Can this MOSFET handle repeated high-temperature cycling?
Is there a specific mounting style recommended for this device?
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