Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1

RS Stock No.:: 462-3449
Mfr. Part No.:: SPW20N60C3FKSA1
Brand:: Infineon

Infineon CoolMOS™ C3 N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 SPW20N60C3FKSA1

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Units	Per unit
1 - 9	£4.89
10 - 24	£4.64
25 - 49	£4.45
50 - 99	£4.25
100 +	£3.96

*price indicative

RS Stock No.:: 462-3449
Mfr. Part No.:: SPW20N60C3FKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	21 A
	Maximum Drain Source Voltage	650 V
	Series	CoolMOS™ C3
	Package Type	TO-247
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.9V
	Minimum Gate Threshold Voltage	2.1V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	87 nC @ 10 V
	Transistor Material	Si
	Width	5.3mm
	Length	15.9mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Minimum Operating Temperature	-55 °C
	Height	20.95mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 21 A
	Maximum Drain Source Voltage 650 V
	Series CoolMOS™ C3
	Package Type TO-247
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.9V
	Minimum Gate Threshold Voltage 2.1V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 87 nC @ 10 V
	Transistor Material Si
	Width 5.3mm
	Length 15.9mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Minimum Operating Temperature -55 °C
	Height 20.95mm
	Forward Diode Voltage 1.2V

Infineon CoolMOS™C3 Power MOSFET

Infineon CoolMOS™ C3 Series MOSFET, 21A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60C3FKSA1

This MOSFET is vital for numerous electronic applications, engineered to enhance efficiency across various tasks. It performs well in high-power environments, serving the automation, electrical, and mechanical sectors. With durable specifications, it ensures stable performance while managing substantial power loads and optimising energy usage.

Features & Benefits

• N-channel configuration enhances conduction capabilities
• Maximum continuous drain current of 21A supports intensive applications
• High voltage rating of 650V provides reliability in challenging conditions
• Low gate charge facilitates efficient switching, reducing energy losses
• Excellent thermal performance allows operation at elevated temperatures
• Designed for through-hole mounting, simplifying assembly procedures

Applications

• Power supply regulation and management in industrial systems
• Motor control systems for efficient power delivery
• Utilised in DC-DC converters for high voltage
• Integrated into renewable energy systems for effective energy conversion
• Employed in power electronics for improved device performance

What is the maximum operating temperature for this component?

It operates efficiently at a maximum temperature of +150°C, suited for high-temperature environments without compromising performance.

How does the low gate charge benefit device operation?

A low gate charge enables faster switching speeds, significantly reducing switching losses and enhancing overall efficiency during operation.

Can this MOSFET handle repeated high-temperature cycling?

Yes, it is designed to maintain its electrical characteristics over numerous thermal cycles, ensuring longevity in variable temperature environments.

Is there a specific mounting style recommended for this device?

This device is intended for through-hole mounting, facilitating easier PCB assembly and providing stable mechanical connections.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.