Infineon CoolMOS™ C3 N-Channel MOSFET, 11 A, 650 V, 3-Pin TO-220 FP SPA11N60C3XKSA1
- RS Stock No.:
- 165-7676
- Mfr. Part No.:
- SPA11N60C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 tube of 50 units)*
£91.00
(exc. VAT)
£109.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 500 unit(s) shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 - 50 | £1.82 | £91.00 |
| 100 - 200 | £1.729 | £86.45 |
| 250 + | £1.62 | £81.00 |
*price indicative
- RS Stock No.:
- 165-7676
- Mfr. Part No.:
- SPA11N60C3XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS™ C3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 380 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 33 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 45 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.65mm | |
| Width | 4.85mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 9.83mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS™ C3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 380 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 33 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 45 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 10.65mm | ||
Width 4.85mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 9.83mm | ||
Minimum Operating Temperature -55 °C | ||
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