Infineon CoolMOS™ C3 N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-220 SPP11N80C3XKSA1
- RS Stock No.:
- 753-3190
- Mfr. Part No.:
- SPP11N80C3XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£2.27
(exc. VAT)
£2.72
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 62 unit(s) shipping from 08 September 2025
- Plus 18 unit(s) shipping from 08 September 2025
- Plus 467 unit(s) shipping from 15 September 2025
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Units | Per unit |
|---|---|
| 1 - 9 | £2.27 |
| 10 - 24 | £2.16 |
| 25 - 49 | £2.07 |
| 50 - 99 | £1.97 |
| 100 + | £1.84 |
*price indicative
- RS Stock No.:
- 753-3190
- Mfr. Part No.:
- SPP11N80C3XKSA1
- Brand:
- Infineon
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 800 V | |
| Series | CoolMOS™ C3 | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 450 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 156 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.57mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 64 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.36mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.45mm | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 800 V | ||
Series CoolMOS™ C3 | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 450 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 156 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.57mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 64 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.36mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 9.45mm | ||
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