N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
- RS Stock No.:
- 541-1039
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
777 In stock - FREE next working day delivery available
166 available from Europe for delivery within 1 working day(s).
Added
Price Each
£1.34
(exc. VAT)
£1.61
(inc. VAT)
| Units | Per unit |
| 1 - 9 | £1.34 |
| 10 - 49 | £1.08 |
| 50 - 99 | £1.01 |
| 100 - 249 | £0.94 |
| 250 + | £0.89 |
- RS Stock No.:
- 541-1039
- Mfr. Part No.:
- IRFD110PBF
- Brand:
- Vishay
Legislation and Compliance
Product Details
N-Channel MOSFET, 100V to 150V, Vishay Semiconductor
FEATURES
• TrenchFET® power MOSFET
• Package with low thermal resistance
• TrenchFET® power MOSFET
• Package with low thermal resistance
MOSFET Transistors, Vishay Semiconductor
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1 A |
| Maximum Drain Source Voltage | 100 V |
| Package Type | HVMDIP |
| Mounting Type | Through Hole |
| Pin Count | 4 |
| Maximum Drain Source Resistance | 540 mΩ |
| Channel Mode | Enhancement |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.3 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 6.29mm |
| Length | 5mm |
| Maximum Operating Temperature | +175 °C |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 8.3 nC @ 10 V |
| Transistor Material | Si |
| Height | 3.37mm |
| Minimum Operating Temperature | -55 °C |
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