Vishay N-Channel MOSFET, 600 mA, 200 V, 4-Pin HVMDIP IRFD210PBF

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Subtotal (1 unit)*

£0.70

(exc. VAT)

£0.84

(inc. VAT)

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  • 1 unit(s) shipping from 31 October 2025
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Units
Per unit
1 - 9£0.70
10 - 49£0.64
50 - 99£0.56
100 - 249£0.54
250 +£0.48

*price indicative

RS Stock No.:
541-0531
Mfr. Part No.:
IRFD210PBF
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

600 mA

Maximum Drain Source Voltage

200 V

Package Type

HVMDIP

Mounting Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.2 nC @ 10 V

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Width

6.29mm

Minimum Operating Temperature

-55 °C

Height

3.37mm

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor



MOSFET Transistors, Vishay Semiconductor

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