Wolfspeed SiC N-Channel MOSFET, 5 A, 1700 V, 3-Pin TO-247 C2M1000170D
- RS Stock No.:
- 904-7345
- Mfr. Part No.:
- C2M1000170D
- Brand:
- Wolfspeed
Bulk discount available
Subtotal (1 unit)*
£9.36
(exc. VAT)
£11.23
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 22 unit(s) ready to ship
- Plus 30 unit(s) shipping from 10 September 2025
- Plus 30 unit(s) shipping from 29 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | £9.36 |
| 5 - 9 | £8.83 |
| 10 - 29 | £8.66 |
| 30 - 89 | £8.43 |
| 90 + | £8.17 |
*price indicative
- RS Stock No.:
- 904-7345
- Mfr. Part No.:
- C2M1000170D
- Brand:
- Wolfspeed
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Wolfspeed | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 1700 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.1V | |
| Minimum Gate Threshold Voltage | 2.4V | |
| Maximum Power Dissipation | 69 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -5 V, +20 V | |
| Width | 5.21mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 13 nC @ 20 V, 13 nC @ 5 V | |
| Length | 16.13mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Forward Diode Voltage | 3.8V | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Wolfspeed | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 1700 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.1V | ||
Minimum Gate Threshold Voltage 2.4V | ||
Maximum Power Dissipation 69 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -5 V, +20 V | ||
Width 5.21mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 13 nC @ 20 V, 13 nC @ 5 V | ||
Length 16.13mm | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
Forward Diode Voltage 3.8V | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
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