Toshiba TK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN TK9J90E
- RS Stock No.:
- 796-5153
- Mfr. Part No.:
- TK9J90E
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 unit)*
£4.53
(exc. VAT)
£5.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5 unit(s) ready to ship
- Plus 18 unit(s) ready to ship from another location
- Plus 5 unit(s) shipping from 11 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 49 | £4.53 |
| 50 - 149 | £3.06 |
| 150 - 374 | £2.99 |
| 375 - 749 | £2.89 |
| 750 + | £2.82 |
*price indicative
- RS Stock No.:
- 796-5153
- Mfr. Part No.:
- TK9J90E
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | TO-3PN | |
| Series | TK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.3 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Length | 15.5mm | |
| Typical Gate Charge @ Vgs | 46 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.5mm | |
| Transistor Material | Si | |
| Height | 20mm | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-3PN | ||
Series TK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Length 15.5mm | ||
Typical Gate Charge @ Vgs 46 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.5mm | ||
Transistor Material Si | ||
Height 20mm | ||
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