Toshiba 2SK N-Channel MOSFET, 9 A, 900 V, 3-Pin TO-3PN 2SK3878(F)
- RS Stock No.:
- 415-354
- Mfr. Part No.:
- 2SK3878(F)
- Brand:
- Toshiba
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 415-354
- Mfr. Part No.:
- 2SK3878(F)
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Toshiba | |
Channel Type | N | |
Maximum Continuous Drain Current | 9 A | |
Maximum Drain Source Voltage | 900 V | |
Package Type | TO-3PN | |
Series | 2SK | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 1.3 Ω | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 4V | |
Maximum Power Dissipation | 150 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -30 V, +30 V | |
Typical Gate Charge @ Vgs | 60 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Length | 15.9mm | |
Number of Elements per Chip | 1 | |
Transistor Material | Si | |
Width | 4.8mm | |
Minimum Operating Temperature | -55 °C | |
Height | 19mm | |
Select all | ||
---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type TO-3PN | ||
Series 2SK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.3 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 60 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.8mm | ||
Minimum Operating Temperature -55 °C | ||
Height 19mm | ||
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