Toshiba 2SK N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J
- RS Stock No.:
- 890-2695
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Brand:
- Toshiba
Save 7% when you buy 250 units
Subtotal (1 pack of 5 units)*
£7.21
(exc. VAT)
£8.65
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 35 left, ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.442 | £7.21 |
| 25 - 45 | £1.414 | £7.07 |
| 50 - 95 | £1.386 | £6.93 |
| 100 - 245 | £1.356 | £6.78 |
| 250 + | £1.33 | £6.65 |
*price indicative
- RS Stock No.:
- 890-2695
- Mfr. Part No.:
- 2SK3565,S5Q(J
- Brand:
- Toshiba
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 900 V | |
| Package Type | SC-67 | |
| Series | 2SK | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 28 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10mm | |
| Width | 4.5mm | |
| Height | 15mm | |
| Forward Diode Voltage | 1.7V | |
Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 900 V | ||
Package Type SC-67 | ||
Series 2SK | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.5 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 28 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10mm | ||
Width 4.5mm | ||
Height 15mm | ||
Forward Diode Voltage 1.7V | ||
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