Toshiba N-Channel MOSFET, 5 A, 500 V, 3-Pin TO-220SIS TK5A50D,S5Q(J

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Package Type

TO-220SIS

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.5 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.4V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

35 W @ 25 °C

Transistor Configuration

Single

Maximum Gate Source Voltage

+30 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

11 nC @ 10 V

Length

10mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Width

4.5mm

Height

15mm

Forward Diode Voltage

-1.7V