MPN

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

RS Stock No.:: 222-4899
Mfr. Part No.:: IPD50R800CEAUMA1
Brand:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 5 A, 500 V Enhancement, 3-Pin TO-252

Subtotal (1 reel of 2500 units)*

£450.00

(exc. VAT)

£550.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

5,000 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
2500 +	£0.18	£450.00

*price indicative

RS Stock No.:: 222-4899
Mfr. Part No.:: IPD50R800CEAUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	5A
	Maximum Drain Source Voltage Vds	500V
	Series	IPD50R
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	800mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.83V
	Typical Gate Charge Qg @ Vgs	12.4nC
	Maximum Power Dissipation Pd	40W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	6.22 mm
	Length	6.73mm
	Standards/Approvals	No
	Height	2.41mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 5A
	Maximum Drain Source Voltage Vds 500V
	Series IPD50R
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 800mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.83V
	Typical Gate Charge Qg @ Vgs 12.4nC
	Maximum Power Dissipation Pd 40W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 6.22 mm
	Length 6.73mm
	Standards/Approvals No
	Height 2.41mm
	Automotive Standard No

Datasheet - IPD50R800CEAUMA1

The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.

Reduced energy stored in output capacitance (E oss)

High body diode ruggedness

Reduced reverse recovery charge (Q rr )

Reduced gate charge (Q g )