Infineon CoolMOS™ N-Channel MOSFET, 5 A, 500 V, 3-Pin DPAK IPD50R800CEAUMA1
- RS Stock No.:
- 222-4899
- Mfr. Part No.:
- IPD50R800CEAUMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£450.00
(exc. VAT)
£550.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 5,000 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.18 | £450.00 |
*price indicative
- RS Stock No.:
- 222-4899
- Mfr. Part No.:
- IPD50R800CEAUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5 A | |
| Maximum Drain Source Voltage | 500 V | |
| Series | CoolMOS™ | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 800 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 5 A | ||
Maximum Drain Source Voltage 500 V | ||
Series CoolMOS™ | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 800 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon 500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market.
Reduced energy stored in output capacitance (E oss)
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
High body diode ruggedness
Reduced reverse recovery charge (Q rr )
Reduced gate charge (Q g )
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