Infineon CoolMOS™ G7 N-Channel MOSFET, 13 A, 600 V, 10-Pin DDPAK IPDD60R190G7XTMA1
- RS Stock No.:
- 222-4904
- Mfr. Part No.:
- IPDD60R190G7XTMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£12.15
(exc. VAT)
£14.60
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,350 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.43 | £12.15 |
| 25 - 45 | £2.236 | £11.18 |
| 50 - 120 | £2.114 | £10.57 |
| 125 - 245 | £1.968 | £9.84 |
| 250 + | £1.822 | £9.11 |
*price indicative
- RS Stock No.:
- 222-4904
- Mfr. Part No.:
- IPDD60R190G7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ G7 | |
| Package Type | DDPAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 10 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ G7 | ||
Package Type DDPAK | ||
Mounting Type Surface Mount | ||
Pin Count 10 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
The Infineon technologies introduces Double DPAK (DDPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The benefits of the already existing high voltage technology 600V CoolMOS™ G7 superjunction (SJ) MOSFET is combined with the innovative concept of top-side cooling, providing a system solution for high current hard switching topologies such as PFC and a high-end efficiency solution for LLC topologies.
Enabling highest energy efficiency
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Thermal decoupling of board and semiconductor allows to overcome thermal PCB limits
Reduced parasitic source inductance improves efficiency and ease-of-use
Enables higher power density solutions
Exceeding the highest quality standards
Related links
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