MPN

Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK

RS Stock No.:: 222-4906
Mfr. Part No.:: IPL60R060CFD7AUMA1
Brand:: Infineon

Infineon IPD50R Type N-Channel MOSFET, 40 A, 600 V Enhancement, 5-Pin ThinPAK

Subtotal (1 reel of 3000 units)*

£7,920.00

(exc. VAT)

£9,510.00

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

Shipping from 25 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£2.64	£7,920.00

*price indicative

RS Stock No.:: 222-4906
Mfr. Part No.:: IPL60R060CFD7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	40A
	Maximum Drain Source Voltage Vds	600V
	Package Type	ThinPAK
	Series	IPD50R
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	60mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	79nC
	Maximum Power Dissipation Pd	219W
	Minimum Operating Temperature	-40°C
	Forward Voltage Vf	1.1V
	Maximum Operating Temperature	150°C
	Length	8.1mm
	Standards/Approvals	No
	Height	1.1mm
	Width	8.1 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 40A
	Maximum Drain Source Voltage Vds 600V
	Package Type ThinPAK
	Series IPD50R
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 60mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 79nC
	Maximum Power Dissipation Pd 219W
	Minimum Operating Temperature -40°C
	Forward Voltage Vf 1.1V
	Maximum Operating Temperature 150°C
	Length 8.1mm
	Standards/Approvals No
	Height 1.1mm
	Width 8.1 mm
	Automotive Standard No

Datasheet - IPL60R060CFD7AUMA1

The Infineon 600V CoolMOS™ CFD7 is Infineon’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS™ 7 series. CoolMOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.

Best-in-class hard commutation ruggedness

Highest reliability for resonant topologies

Highest efficiency with outstanding ease-of-use/performance trade-off

Enabling increased power density solutions