Infineon CoolMOS™ C7 N-Channel MOSFET, 29 A, 600 V, 5-Pin ThinPAK 8 x 8 IPL60R065C7AUMA1
- RS Stock No.:
- 222-4909
- Mfr. Part No.:
- IPL60R065C7AUMA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£8.40
(exc. VAT)
£10.08
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 999,999,998 unit(s) shipping from 05 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £4.20 | £8.40 |
| 10 - 18 | £3.66 | £7.32 |
| 20 - 48 | £3.40 | £6.80 |
| 50 - 98 | £3.19 | £6.38 |
| 100 + | £2.94 | £5.88 |
*price indicative
- RS Stock No.:
- 222-4909
- Mfr. Part No.:
- IPL60R065C7AUMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 29 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ C7 | |
| Package Type | ThinPAK 8 x 8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 29 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ C7 | ||
Package Type ThinPAK 8 x 8 | ||
Mounting Type Surface Mount | ||
Pin Count 5 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Reduced switching loss parameters such as Q G, C oss, E oss
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
Best-in-class figure of merit Q G*R DS(on)
Increased switching frequency
Best R (on)*A in the world
Rugged body diode
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