Infineon CoolMOS™ C7 N-Channel MOSFET, 13 A, 600 V, 3-Pin DPAK IPD60R180C7ATMA1
- RS Stock No.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
£1,640.00
(exc. VAT)
£1,967.50
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 27 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | £0.656 | £1,640.00 |
*price indicative
- RS Stock No.:
- 222-4901
- Mfr. Part No.:
- IPD60R180C7ATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 13 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS™ C7 | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 13 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS™ C7 | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
The Infineon 600V CoolMOS™ C7 superjunction (SJ) MOSFET series offers a ∼50% reduction in turn-off losses (E oss ) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs.
Enables increasing switching frequency without loss in efficiency
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Measure showing key parameter for light load and full load efficiency
Doubling the switching frequency will half the size of magnetic components
Smaller packages for same R DS(on)
Can be used in many more positions for both hard and soft switching topologies
Related links
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