Toshiba Single 2SK 1 Type N-Channel MOSFET, 3 A, 900 V Enhancement, 3-Pin SC-67 2SK3564,S5Q(J
- RS Stock No.:
- 890-2686
- Mfr. Part No.:
- 2SK3564,S5Q(J
- Brand:
- Toshiba
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.10
(exc. VAT)
£6.10
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.02 | £5.10 |
| 25 - 45 | £0.998 | £4.99 |
| 50 - 95 | £0.978 | £4.89 |
| 100 - 245 | £0.958 | £4.79 |
| 250 + | £0.942 | £4.71 |
*price indicative
- RS Stock No.:
- 890-2686
- Mfr. Part No.:
- 2SK3564,S5Q(J
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 900V | |
| Series | 2SK | |
| Package Type | SC-67 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.3Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.9V | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Height | 15mm | |
| Width | 4.5 mm | |
| Length | 10mm | |
| Standards/Approvals | No | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 900V | ||
Series 2SK | ||
Package Type SC-67 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.3Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.9V | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Height 15mm | ||
Width 4.5 mm | ||
Length 10mm | ||
Standards/Approvals No | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
MOSFET N-Channel, 2SK Series, Toshiba
MOSFET Transistors, Toshiba
Related links
- Toshiba Single 2SK 1 Type N-Channel MOSFET 900 V EnhancementS5Q(J
- Toshiba Single 2SK 1 Type N-Channel MOSFET 800 V EnhancementS5Q(J
- Toshiba Type N-Channel MOSFET 500 V EnhancementS5Q(J
- Toshiba 2SK Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 2SK1062(F)
- Toshiba Single 1 Type N-Channel MOSFET Enhancement, 3-Pin SOT-23 SSM3K361R
- Toshiba Single 1 Type N-Channel MOSFET EnhancementLF(B
- Toshiba Single 1 Type N-Channel MOSFET 3-Pin SOT-723 SSM3K37MFV
- Toshiba Single TK 1 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TK2Q60D(Q)