Toshiba 2SK N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

3 A

Maximum Drain Source Voltage

900 V

Series

2SK

Package Type

SC-67

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

4.3 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Maximum Power Dissipation

40 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Width

4.5mm

Typical Gate Charge @ Vgs

17 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

10mm

Forward Diode Voltage

1.9V

Height

15mm