Toshiba TK N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3PN TK12J60W,S1VQ(O

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.5 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

110 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Length

15.5mm

Number of Elements per Chip

1

Width

4.5mm

Forward Diode Voltage

1.7V

Height

20mm