Toshiba TK N-Channel MOSFET, 39 A, 600 V, 3-Pin TO-3PN TK39J60W5,S1VQ(O

Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

600 V

Package Type

TO-3PN

Series

TK

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

74 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.7V

Maximum Power Dissipation

270 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Length

15.5mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

135 nC @ 10 V

Transistor Material

Si

Width

4.5mm

Height

20mm