Toshiba DTMOSIV Type N-Channel MOSFET, 13.7 A, 650 V Enhancement, 3-Pin TO-263 TK14G65W,RQ(S

Temporarily out of stock
RS Stock No.:
133-2797
Mfr. Part No.:
TK14G65W,RQ(S
Brand:
Toshiba
Find similar products by selecting one or more attributes.
Select all

Brand

Toshiba

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13.7A

Maximum Drain Source Voltage Vds

650V

Series

DTMOSIV

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

250mΩ

Channel Mode

Enhancement

Forward Voltage Vf

-1.7V

Maximum Gate Source Voltage Vgs

30 V

Maximum Power Dissipation Pd

130W

Typical Gate Charge Qg @ Vgs

35nC

Maximum Operating Temperature

150°C

Length

10.35mm

Width

8.8 mm

Height

4.46mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
JP

MOSFET Transistors, Toshiba


Related links