Toshiba DTMOSIV N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

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RS Stock No.:
133-2797
Mfr. Part No.:
TK14G65W,RQ(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

13.7 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

130 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

35 nC @ 10 V

Number of Elements per Chip

1

Length

10.35mm

Width

8.8mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Forward Diode Voltage

1.7V

Height

4.46mm

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