Toshiba DTMOSIV N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S

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We don't know if this item will be back in stock, RS intend to remove it from our range soon.
RS Stock No.:
133-2796
Mfr. Part No.:
TK11P65W,RQ(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

11.1 A

Maximum Drain Source Voltage

650 V

Series

DTMOSIV

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

100 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Width

6.1mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

25 nC @ 10 V

Length

6.6mm

Forward Diode Voltage

1.7V

Height

2.3mm

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