Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S

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Subtotal (1 pack of 2 units)*

£6.12

(exc. VAT)

£7.34

(inc. VAT)

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  • 6 unit(s) ready to ship
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Per Pack*
2 - 8£3.06£6.12
10 - 18£2.24£4.48
20 - 48£2.185£4.37
50 - 98£2.115£4.23
100 +£2.08£4.16

*price indicative

RS Stock No.:
125-0563
Mfr. Part No.:
TK31E60X,S1X(S
Brand:
Toshiba
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Brand

Toshiba

Channel Type

N

Maximum Continuous Drain Current

30.8 A

Maximum Drain Source Voltage

600 V

Series

DTMOSIV

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

88 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

230 W

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.16mm

Typical Gate Charge @ Vgs

65 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Width

4.45mm

Forward Diode Voltage

1.7V

Height

15.1mm

COO (Country of Origin):
JP

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