Toshiba DTMOSIV N-Channel MOSFET, 30.8 A, 600 V, 3-Pin TO-220 TK31E60X,S1X(S
- RS Stock No.:
- 125-0563
- Mfr. Part No.:
- TK31E60X,S1X(S
- Brand:
- Toshiba
Subtotal (1 pack of 2 units)*
£6.12
(exc. VAT)
£7.34
(inc. VAT)
FREE delivery for orders over £50.00
- 4 unit(s) ready to ship
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.06 | £6.12 |
| 10 - 18 | £2.24 | £4.48 |
| 20 - 48 | £2.185 | £4.37 |
| 50 - 98 | £2.115 | £4.23 |
| 100 + | £2.08 | £4.16 |
*price indicative
- RS Stock No.:
- 125-0563
- Mfr. Part No.:
- TK31E60X,S1X(S
- Brand:
- Toshiba
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30.8 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Series | DTMOSIV | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 88 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 230 W | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.45mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.16mm | |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V | |
| Transistor Material | Si | |
| Height | 15.1mm | |
| Forward Diode Voltage | 1.7V | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 30.8 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Series DTMOSIV | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 88 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 230 W | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.45mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 10.16mm | ||
Typical Gate Charge @ Vgs 65 nC @ 10 V | ||
Transistor Material Si | ||
Height 15.1mm | ||
Forward Diode Voltage 1.7V | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK3x Series, Toshiba
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