Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN1R8-30PL,127
- RS Stock No.:
- 798-2924
- Mfr. Part No.:
- PSMN1R8-30PL,127
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.42
(exc. VAT)
£7.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 28 unit(s) ready to ship
- Plus 4,640 unit(s) shipping from 19 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | £3.21 | £6.42 |
| 10 - 38 | £2.82 | £5.64 |
| 40 - 98 | £2.47 | £4.94 |
| 100 - 198 | £2.31 | £4.62 |
| 200 + | £2.19 | £4.38 |
*price indicative
- RS Stock No.:
- 798-2924
- Mfr. Part No.:
- PSMN1R8-30PL,127
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.15V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 270 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.7mm | |
| Number of Elements per Chip | 1 | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 170 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16mm | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.15V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 270 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.7mm | ||
Number of Elements per Chip 1 | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 170 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 16mm | ||
- COO (Country of Origin):
- PH
N-Channel MOSFET, up to 30V
MOSFET Transistors, NXP Semiconductors