Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN2R7-30PL,127
- RS Stock No.:
- 798-2930
- Mfr. Part No.:
- PSMN2R7-30PL,127
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 4 units)*
£7.132
(exc. VAT)
£8.56
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 144 unit(s) ready to ship
- Plus 12 unit(s) ready to ship from another location
- Plus 916 unit(s) shipping from 10 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | £1.783 | £7.132 |
| 40 - 96 | £1.64 | £6.56 |
| 100 - 196 | £1.543 | £6.172 |
| 200 - 396 | £1.423 | £5.692 |
| 400 + | £1.305 | £5.22 |
*price indicative
- RS Stock No.:
- 798-2930
- Mfr. Part No.:
- PSMN2R7-30PL,127
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.15V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 170 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 66 nC @ 10 V | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16mm | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.15V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 170 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 66 nC @ 10 V | ||
Width 4.7mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Height 16mm | ||