Nexperia N-Channel MOSFET, 100 A, 80 V, 3-Pin TO-220AB PSMN4R4-80PS,127
- RS Stock No.:
- 798-2971
- Mfr. Part No.:
- PSMN4R4-80PS,127
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 2 units)*
£6.27
(exc. VAT)
£7.524
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 19 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 24 | £3.135 | £6.27 |
| 26 + | £1.95 | £3.90 |
*price indicative
- RS Stock No.:
- 798-2971
- Mfr. Part No.:
- PSMN4R4-80PS,127
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.1 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 306 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Typical Gate Charge @ Vgs | 125 nC @ 10 V | |
| Length | 10.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Transistor Material | Si | |
| Height | 16mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.1 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 306 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Typical Gate Charge @ Vgs 125 nC @ 10 V | ||
Length 10.3mm | ||
Maximum Operating Temperature +175 °C | ||
Transistor Material Si | ||
Height 16mm | ||
Minimum Operating Temperature -55 °C | ||