Nexperia N-Channel MOSFET, 100 A, 40 V, 3-Pin TO-220AB PSMN4R5-40PS,127
- RS Stock No.:
- 798-2978
- Mfr. Part No.:
- PSMN4R5-40PS,127
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 4 units)*
£4.52
(exc. VAT)
£5.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 8 unit(s) ready to ship
- Plus 24 unit(s) ready to ship from another location
- Plus 20 unit(s) shipping from 09 September 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 4 - 36 | £1.13 | £4.52 |
| 40 - 96 | £1.04 | £4.16 |
| 100 - 196 | £0.978 | £3.912 |
| 200 - 396 | £0.90 | £3.60 |
| 400 + | £0.828 | £3.312 |
*price indicative
- RS Stock No.:
- 798-2978
- Mfr. Part No.:
- PSMN4R5-40PS,127
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.6 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 148 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 42.3 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Height | 16mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.6 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 148 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 42.3 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Height 16mm | ||
Minimum Operating Temperature -55 °C | ||