Nexperia N-Channel MOSFET, 100 A, 30 V, 3-Pin TO-220AB PSMN4R3-30PL,127
- RS Stock No.:
- 798-2962
- Mfr. Part No.:
- PSMN4R3-30PL,127
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 5 units)*
£6.77
(exc. VAT)
£8.125
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 20 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £1.354 | £6.77 |
| 10 - 20 | £1.156 | £5.78 |
| 25 - 45 | £1.092 | £5.46 |
| 50 - 95 | £1.038 | £5.19 |
| 100 + | £0.89 | £4.45 |
*price indicative
- RS Stock No.:
- 798-2962
- Mfr. Part No.:
- PSMN4R3-30PL,127
- Brand:
- Nexperia
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | TO-220AB | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.15V | |
| Minimum Gate Threshold Voltage | 1.3V | |
| Maximum Power Dissipation | 103 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Length | 10.3mm | |
| Typical Gate Charge @ Vgs | 41.5 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.7mm | |
| Maximum Operating Temperature | +175 °C | |
| Height | 16mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-220AB | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.15V | ||
Minimum Gate Threshold Voltage 1.3V | ||
Maximum Power Dissipation 103 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Length 10.3mm | ||
Typical Gate Charge @ Vgs 41.5 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.7mm | ||
Maximum Operating Temperature +175 °C | ||
Height 16mm | ||
Minimum Operating Temperature -55 °C | ||