DiodesZetex Isolated 2 Type P, Type N-Channel MOSFET, 840 mA, 20 V Enhancement, 6-Pin SC-88 DMG1016UDW-7
- RS Stock No.:
- 751-4089
- Mfr. Part No.:
- DMG1016UDW-7
- Brand:
- DiodesZetex
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Subtotal (1 tape of 50 units)*
£2.05
(exc. VAT)
£2.45
(inc. VAT)
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In Stock
- Plus 900 unit(s) shipping from 29 December 2025
- Plus 100,750 unit(s) shipping from 05 January 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 550 | £0.041 | £2.05 |
| 600 - 1450 | £0.039 | £1.95 |
| 1500 + | £0.038 | £1.90 |
*price indicative
- RS Stock No.:
- 751-4089
- Mfr. Part No.:
- DMG1016UDW-7
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 840mA | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | SC-88 | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 1.5mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 150°C | |
| Typical Gate Charge Qg @ Vgs | 736.6nC | |
| Forward Voltage Vf | 0.7V | |
| Maximum Gate Source Voltage Vgs | -6/6 V | |
| Maximum Power Dissipation Pd | 330mW | |
| Transistor Configuration | Isolated | |
| Maximum Operating Temperature | -55°C | |
| Height | 1mm | |
| Width | 1.35 mm | |
| Standards/Approvals | MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | |
| Length | 2.2mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 840mA | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type SC-88 | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 1.5mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 150°C | ||
Typical Gate Charge Qg @ Vgs 736.6nC | ||
Forward Voltage Vf 0.7V | ||
Maximum Gate Source Voltage Vgs -6/6 V | ||
Maximum Power Dissipation Pd 330mW | ||
Transistor Configuration Isolated | ||
Maximum Operating Temperature -55°C | ||
Height 1mm | ||
Width 1.35 mm | ||
Standards/Approvals MIL-STD-202, UL 94V-0, RoHS, AEC-Q101, J-STD-020 | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
- COO (Country of Origin):
- CN
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
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