MPN

Diodes Inc Dual N-Channel MOSFET, 200 mA, 60 V, 6-Pin SOT-363 DMN65D8LDW-7

Subtotal (1 pack of 100 units)*

£5.70

(exc. VAT)

£6.80

(inc. VAT)

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
100 +	£0.057	£5.70

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	200 mA
	Maximum Drain Source Voltage	60 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	8 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	20V
	Maximum Power Dissipation	400 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	0.87 nC @ 10 V
	Length	2.2mm
	Number of Elements per Chip	2
	Transistor Material	Si
	Width	1.35mm
	Minimum Operating Temperature	-55 °C
	Height	1mm

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 200 mA
	Maximum Drain Source Voltage 60 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 8 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 20V
	Maximum Power Dissipation 400 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 0.87 nC @ 10 V
	Length 2.2mm
	Number of Elements per Chip 2
	Transistor Material Si
	Width 1.35mm
	Minimum Operating Temperature -55 °C
	Height 1mm

MOSFET Transistors, Diodes Inc.

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