Diodes Inc Dual N-Channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363 DMN3190LDW-7
- RS Stock No.:
- 827-0480
- Mfr. Part No.:
- DMN3190LDW-7
- Brand:
- DiodesZetex
Subtotal (1 pack of 50 units)*
£4.40
(exc. VAT)
£5.30
(inc. VAT)
FREE delivery for orders over £50.00
- 5,350 unit(s) ready to ship
Units | Per unit | Per Pack* |
---|---|---|
50 - 200 | £0.088 | £4.40 |
250 - 450 | £0.052 | £2.60 |
500 - 1200 | £0.05 | £2.50 |
1250 - 2450 | £0.049 | £2.45 |
2500 + | £0.048 | £2.40 |
*price indicative
- RS Stock No.:
- 827-0480
- Mfr. Part No.:
- DMN3190LDW-7
- Brand:
- DiodesZetex
Select all | Attribute | Value |
---|---|---|
Brand | DiodesZetex | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.3 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-363 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Drain Source Resistance | 335 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 2.8V | |
Maximum Power Dissipation | 400 mW | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 2.2mm | |
Number of Elements per Chip | 2 | |
Transistor Material | Si | |
Width | 1.35mm | |
Typical Gate Charge @ Vgs | 2 nC @ 10 V | |
Maximum Operating Temperature | +150 °C | |
Minimum Operating Temperature | -55 °C | |
Height | 1mm | |
Select all | ||
---|---|---|
Brand DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.3 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-363 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 335 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.8V | ||
Maximum Power Dissipation 400 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.2mm | ||
Number of Elements per Chip 2 | ||
Transistor Material Si | ||
Width 1.35mm | ||
Typical Gate Charge @ Vgs 2 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Dual N-Channel MOSFET, Diodes Inc.
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