MPN

Diodes Inc Dual N-Channel MOSFET, 1.3 A, 30 V, 6-Pin SOT-363 DMN3190LDW-7

Subtotal (1 reel of 3000 units)*

£150.00

(exc. VAT)

£180.00

(inc. VAT)

In Stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Reel*
3000 +	£0.05	£150.00

*price indicative

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	DiodesZetex
	Channel Type	N
	Maximum Continuous Drain Current	1.3 A
	Maximum Drain Source Voltage	30 V
	Package Type	SOT-363
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	335 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.8V
	Maximum Power Dissipation	400 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-20 V, +20 V
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	2 nC @ 10 V
	Length	2.2mm
	Width	1.35mm
	Number of Elements per Chip	2
	Height	1mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand DiodesZetex
	Channel Type N
	Maximum Continuous Drain Current 1.3 A
	Maximum Drain Source Voltage 30 V
	Package Type SOT-363
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 335 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.8V
	Maximum Power Dissipation 400 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -20 V, +20 V
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 2 nC @ 10 V
	Length 2.2mm
	Width 1.35mm
	Number of Elements per Chip 2
	Height 1mm
	Minimum Operating Temperature -55 °C

MOSFET Transistors, Diodes Inc.

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