Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

RS Stock No.:: 163-1114
Mfr. Part No.:: NTJD1155LT1G
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 onsemi NTJD1155LT1G

Available to back order for despatch 30/09/2024

Added

Price Each (On a Reel of 3000)

£0.123

(exc. VAT)

£0.148

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.123	£369.00
*price indicative

RS Stock No.:: 163-1114
Mfr. Part No.:: NTJD1155LT1G
Brand:: onsemi

Technical Reference

Legislation and Compliance

COO (Country of Origin):: CN

Product Details

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

Features and Benefits:

• ESD Protection
• Ultra-low Rds P-Channel load switch
• V range of 1.8 – 8.0V
• ON/OFF Range – 1.5 to 8.0V
• SOT 363 package
• Drive loads up to 1.3A with 8V.

Applications:

• High side load switch with level shift
• Mobile phones
• Digital cameras
• PDA’s
• Media Players

MOSFET Transistors, ON Semiconductor

Specifications

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	1.3 A
Maximum Drain Source Voltage	8 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	320 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1V
Maximum Power Dissipation	400 mW
Transistor Configuration	N+P Loadswitch
Maximum Gate Source Voltage	+8 V
Width	1.35mm
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Length	2.2mm
Transistor Material	Si
Height	1mm
Minimum Operating Temperature	-55 °C

RS Stock No.:: 163-1114
Mfr. Part No.:: NTJD1155LT1G
Brand:: onsemi