onsemi Dual N/P-Channel MOSFET, 1.3 A, 8 V, 6-Pin SOT-363 NTJD1155LT1G

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Subtotal (1 reel of 3000 units)*

£198.00

(exc. VAT)

£237.00

(inc. VAT)

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Per Reel*
3000 +£0.066£198.00

*price indicative

RS Stock No.:
163-1114
Mfr. Part No.:
NTJD1155LT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

8 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

320 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Maximum Power Dissipation

400 mW

Transistor Configuration

N+P Loadswitch

Maximum Gate Source Voltage

+8 V

Transistor Material

Si

Length

2.2mm

Width

1.35mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

2

Height

1mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
CN

Dual N/P-Channel MOSFET, ON Semiconductor


The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.


MOSFET Transistors, ON Semiconductor

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