Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

RS Stock No.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Brand:: onsemi

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Available to back order for despatch 27/12/2024

Price Each (On a Tape of 25)

£0.168

(exc. VAT)

£0.202

(inc. VAT)

Units	Per unit	Per Tape*
25 - 100	£0.168	£4.20
125 - 225	£0.159	£3.975
250 - 600	£0.151	£3.775
625 - 1225	£0.143	£3.575
1250 +	£0.138	£3.45

*price indicative

RS Stock No.:: 780-0614
Mfr. Part No.:: NTJD4158CT1G
Brand:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N, P
Maximum Continuous Drain Current	250 mA, 880 mA
Maximum Drain Source Voltage	20 V, 30 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	2.5 Ω, 500 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.5V
Maximum Power Dissipation	270 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-20 V, -12 V, +12 V, +20 V
Width	1.35mm
Transistor Material	Si
Length	2.2mm
Typical Gate Charge @ Vgs	0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Minimum Operating Temperature	-55 °C
Height	1mm

Dual N/P-Channel-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 onsemi NTJD4158CT1G

Dual N/P-Channel MOSFET, ON Semiconductor

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