onsemi Dual N/P-Channel MOSFET, 250 mA, 880 mA, 20 V, 30 V, 6-Pin SOT-363 NTJD4158CT1G

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Subtotal (1 tape of 25 units)*

£4.45

(exc. VAT)

£5.35

(inc. VAT)

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Units
Per unit
Per Tape*
25 - 75£0.178£4.45
100 - 225£0.154£3.85
250 - 475£0.133£3.33
500 - 975£0.117£2.93
1000 +£0.106£2.65

*price indicative

Packaging Options:
RS Stock No.:
780-0614
Mfr. Part No.:
NTJD4158CT1G
Brand:
onsemi
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Brand

onsemi

Channel Type

N, P

Maximum Continuous Drain Current

250 mA, 880 mA

Maximum Drain Source Voltage

20 V, 30 V

Package Type

SOT-363

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

2.5 Ω, 500 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

270 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, -12 V, +12 V, +20 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

0.9 nC @ 5 V, 2.2 nC @ 4.5 V

Width

1.35mm

Length

2.2mm

Minimum Operating Temperature

-55 °C

Height

1mm

Dual N/P-Channel MOSFET, ON Semiconductor


The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.


MOSFET Transistors, ON Semiconductor

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