Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

RS Stock No.:: 163-1117
Mfr. Part No.:: NTJD4152PT1G
Brand:: onsemi

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

21000 In stock - FREE next working day delivery available

Price Each (On a Reel of 3000)

£0.08

(exc. VAT)

£0.10

(inc. VAT)

Units	Per unit	Per Reel*
3000 +	£0.08	£240.00
*price indicative

RS Stock No.:: 163-1117
Mfr. Part No.:: NTJD4152PT1G
Brand:: onsemi

Datasheet
ESD Control Selection Guide V1

RS Stock No.:: 163-1117
Mfr. Part No.:: NTJD4152PT1G
Brand:: onsemi

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	880 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	350 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
Length	2.2mm
Number of Elements per Chip	2
Width	1.35mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	880 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-363
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	1 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.2V
Maximum Power Dissipation	350 mW
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-12 V, +12 V
Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
Length	2.2mm
Number of Elements per Chip	2
Width	1.35mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Height	1mm
Minimum Operating Temperature	-55 °C

Dual P-Channel MOSFET, 880 mA, 20 V, 6-Pin SOT-363 onsemi NTJD4152PT1G

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