PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	830 mA
	Maximum Drain Source Voltage	20 V
	Package Type	SC-89-6
	Series	PowerTrench
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	1.8 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	625 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-8 V, +8 V
	Length	1.7mm
	Number of Elements per Chip	2
	Width	1.2mm
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Typical Gate Charge @ Vgs	2.2 nC @ 4.5 V
	Minimum Operating Temperature	-55 °C
	Height	0.6mm

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 830 mA
	Maximum Drain Source Voltage 20 V
	Package Type SC-89-6
	Series PowerTrench
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 1.8 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 625 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -8 V, +8 V
	Length 1.7mm
	Number of Elements per Chip 2
	Width 1.2mm
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Typical Gate Charge @ Vgs 2.2 nC @ 4.5 V
	Minimum Operating Temperature -55 °C
	Height 0.6mm

onsemi PowerTrench Dual P-Channel MOSFET, 830 mA, 20 V, 6-Pin SC-89-6 FDY1002PZ

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

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